https://ogma.newcastle.edu.au/vital/access/ /manager/Index en-au 5 Damage accumulation and recovery in C<sup>+</sup> -irradiated Ti<sub>3</sub>SiC<sub>2</sub> https://ogma.newcastle.edu.au/vital/access/ /manager/Repository/uon:19030 3SiC2 irradiated by 700 keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270 °C results in decomposition to TiC; however, this is not observed at temperatures above 270 °C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350 °C. At higher temperatures the damage level increases, and results in material which is made up of damaged Tii3SiC2.]]> Sat 24 Mar 2018 08:05:28 AEDT ]]> Deuterium retention in the carbon co-deposition layers deposited by magnetron sputtering in D₂/He atmosphere https://ogma.newcastle.edu.au/vital/access/ /manager/Repository/uon:17453 Sat 24 Mar 2018 08:04:14 AEDT ]]> Structure and deuterium retention properties of tungsten layers deposited by plasma sputtering in a mixed atmosphere of D₂ and He https://ogma.newcastle.edu.au/vital/access/ /manager/Repository/uon:21466 Sat 24 Mar 2018 07:52:30 AEDT ]]> Roles of silicon-layer in Ti₃SiC₂ materials response to helium irradiation: new insights from first-principles calculation https://ogma.newcastle.edu.au/vital/access/ /manager/Repository/uon:26465 Sat 24 Mar 2018 07:27:16 AEDT ]]> Damage tolerance of Ti₃SiC₂ to high energy iodine irradiation https://ogma.newcastle.edu.au/vital/access/ /manager/Repository/uon:22092 0.67. It was found that a TiC nanocrystalline phase was formed under the high dose irradiation. However, a complete decomposition by irradiation did not take place even at 10.3 dpa. Post irradiation annealing to temperatures of 500–800 °C results in crystal regrowth of Ti₃SiC₂ and TiC phases.]]> Sat 24 Mar 2018 07:15:15 AEDT ]]>